ioaucki, una, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BC182, BC182b amplifier tyansistors npn silicon maximum ratings rating collector- emitter voltage collector- base voltage emitter- base voltage collector current - continuous total device dissipation @ ta = 25c derate above 25cc total device dissipation @ tq = 25c derate above 25"c operating and storage junction temperature range symbol vceo vcbo vebo ic pd pd tj, tstg value 50 60 6.0 100 350 2.8 1.0 8.0 -55 id +150 unit vdc vdc vdc madc mw mw/c w mw/c c to-92 thermal characteristics characteristic thermal resistance, junction-to-ambient thermal resistance, junction-to-case symbol reja rbjc max 357 125 unit "c/w c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 3 - 3 straight lead bent lead bulk pack tape & reel ammo pack marking diagram a y ww = assembly location = year = work week nj sem.-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice mformat.on furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. semi-conductors qualify
BC182, BC182b electrical characteristics (ta = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector- emitter breakdown voltage (lc = 2.0 ma, ib = 0) collector- base breakdown voltage (ic = 10ma, ie = 0) emitter- base breakdown voltage (ie = 100(.a,ic = 0) collector cutoff current (vcb = 50 v, vbe = 0) emitter-base leakage current (veb = 4.0v, lc = 0) v(br)ceo v(br)cbo v(br)ebo 'cbo iebo 50 60 6.0 ~ ~ - ? ? 0.2 ? - ? - 15 15 v v v na na on characteristics dc current gain (ic = 10|*a, vce = 5.0v) BC182 (lc = 2.0 ma,vce = 5.0v) BC182 BC182b (lc = 100 ma, vce = 5.0 v) BC182 collector- emitter on voltage (lc = 10 ma, ib = 0.5 ma) (lc = 100 ma, ib = 5.0 ma) (note 1) base -emitter saturation voltage (lc = 100 ma, ib = 5.0 rna) (note 1) base-emitter on voltage (lc = 100 na, vce = 5.0 v) (lc = 2.0ma, vce = 5.0v) (lc = 100 ma, vce = 5.0 v) (note 1) hfe vce(sat) vbe(sat) vbe(on) 40 120 180 80 - ? - - 0.55 ? - - - - 0.07 0.2 - 0.5 0.62 0.83 ? 500 500 - 0.25 0.6 1.2 - 0.7 - - v v v dynamic characteristics current-gain ? bandwidth product (lc = 0.5 ma, vce = 3- v, f = 100 mhz) (lc = 10 ma, vce = 5-0 v, f = 100 mhz) common base output capacitance (vcb = 10v, lc = 0, f= 1.0 mhz) common base input capacitance (veb = 0.5 v, lc = 0, f = 1 .0 mhz) small-signal current gain (lc = 2.0 ma, vce = 5.0 v, f = 1 .0 khz) BC182 BC182b noise figure (lc = 0.2 ma, vce = 5.0 v, rg = 2.0 kd, f = 1 .0 khz) fr cob cib hfe nf - 150 - - 125 240 ~ 100 200 - 8.0 - ? 2.0 - - 5.0 - 500 500 10 mhz pf pf _ db 1. pulse test: tp 300 s, duty cycle 2.0%.
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